Methods and materials for modifying the threshold voltage of metal oxide stacks

Methods and materials for modifying the threshold voltage of metal oxide stacks

Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.

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Hauptverfasser: Ma, Paul F, Krishnan, Siddarth, Basu, Atashi, Sathiyanarayanan, Rajesh
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Ma, Paul F
Krishnan, Siddarth
Basu, Atashi
Sathiyanarayanan, Rajesh
description Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.
format Patent
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Methods and materials for modifying the threshold voltage of metal oxide stacks
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