Methods and materials for modifying the threshold voltage of metal oxide stacks

Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.

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Bibliographische Detailangaben
Hauptverfasser:	Ma, Paul F, Krishnan, Siddarth, Basu, Atashi, Sathiyanarayanan, Rajesh
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.