Laser processing apparatus and laser processing method

A laser processing method includes holding a single crystal silicon wafer as a workpiece, selecting a laser beam having a wavelength of 1950 nm or more in a transmission wavelength region to the single crystal silicon wafer, and applying the laser beam to the single crystal silicon wafer along a pre...

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Bibliographische Detailangaben
Hauptverfasser:	Yoshino, Tomoki, Morikazu, Hiroshi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	A laser processing method includes holding a single crystal silicon wafer as a workpiece, selecting a laser beam having a wavelength of 1950 nm or more in a transmission wavelength region to the single crystal silicon wafer, and applying the laser beam to the single crystal silicon wafer along a predetermined area with the focal point of the laser beam set inside the wafer, thereby forming a plurality of shield tunnels arranged along the predetermined area. Each shield tunnel is composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The fine hole extends from a beam applied surface of the wafer where the laser beam is applied to the other surface opposite to the beam applied surface.