Integrated high-side driver for P-N bimodal power device

Integrated high-side driver for P-N bimodal power device

An integrated circuit chip includes a bimodal power N-P-Laterally Diffused Metal Oxide Semiconductor (LDMOS) device having an N-gate coupled to receive an input signal and a level shifter coupled to receive the input signal and to provide a control signal to a P-gate driver of the N-P-LDMOS device....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Hower, Philip L, Marino, Filippo, Zhang, Yongxi, Sridhar, Seetharaman, Giombanco, Salvatore, Pendharkar, Sameer P
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit chip includes a bimodal power N-P-Laterally Diffused Metal Oxide Semiconductor (LDMOS) device having an N-gate coupled to receive an input signal and a level shifter coupled to receive the input signal and to provide a control signal to a P-gate driver of the N-P-LDMOS device. A method of operating an N-P-LDMOS power device is also disclosed.