Resistive random access memory with deuterium

Resistive random access memory with deuterium

An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; and an oxide layer between the OEL and the bottom electrode; wherein the oxide layer includes Deuterium and oxygen vacancies. Other embodiments ar...

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Hauptverfasser: Jain, Pulkit, Majhi, Prashant, Killampalli, Aravind S, Gupta, Jay P, Clarke, James S, Pillarisetty, Ravi, Mukherjee, Niloy, Karpov, Elijah V, Shah, Uday
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ELECTRICITY
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creator Jain, Pulkit
Majhi, Prashant
Killampalli, Aravind S
Gupta, Jay P
Clarke, James S
Pillarisetty, Ravi
Mukherjee, Niloy
Karpov, Elijah V
Shah, Uday
description An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; and an oxide layer between the OEL and the bottom electrode; wherein the oxide layer includes Deuterium and oxygen vacancies. Other embodiments are described herein.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10573809B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10573809B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10573809B23</originalsourceid><addsrcrecordid>eNrjZNANSi3OLC7JLEtVKErMS8nPVUhMTk4tLlbITc3NL6pUKM8syVBISS0tSS3KLM3lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBqbmxhYGlk5GxsSoAQD3kirE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Resistive random access memory with deuterium</title><source>esp@cenet</source><creator>Jain, Pulkit ; Majhi, Prashant ; Killampalli, Aravind S ; Gupta, Jay P ; Clarke, James S ; Pillarisetty, Ravi ; Mukherjee, Niloy ; Karpov, Elijah V ; Shah, Uday</creator><creatorcontrib>Jain, Pulkit ; Majhi, Prashant ; Killampalli, Aravind S ; Gupta, Jay P ; Clarke, James S ; Pillarisetty, Ravi ; Mukherjee, Niloy ; Karpov, Elijah V ; Shah, Uday</creatorcontrib><description>An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; and an oxide layer between the OEL and the bottom electrode; wherein the oxide layer includes Deuterium and oxygen vacancies. Other embodiments are described herein.</description><language>eng</language><subject>ELECTRICITY</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200225&amp;DB=EPODOC&amp;CC=US&amp;NR=10573809B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200225&amp;DB=EPODOC&amp;CC=US&amp;NR=10573809B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Jain, Pulkit</creatorcontrib><creatorcontrib>Majhi, Prashant</creatorcontrib><creatorcontrib>Killampalli, Aravind S</creatorcontrib><creatorcontrib>Gupta, Jay P</creatorcontrib><creatorcontrib>Clarke, James S</creatorcontrib><creatorcontrib>Pillarisetty, Ravi</creatorcontrib><creatorcontrib>Mukherjee, Niloy</creatorcontrib><creatorcontrib>Karpov, Elijah V</creatorcontrib><creatorcontrib>Shah, Uday</creatorcontrib><title>Resistive random access memory with deuterium</title><description>An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; and an oxide layer between the OEL and the bottom electrode; wherein the oxide layer includes Deuterium and oxygen vacancies. Other embodiments are described herein.</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNANSi3OLC7JLEtVKErMS8nPVUhMTk4tLlbITc3NL6pUKM8syVBISS0tSS3KLM3lYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxocGGBqbmxhYGlk5GxsSoAQD3kirE</recordid><startdate>20200225</startdate><enddate>20200225</enddate><creator>Jain, Pulkit</creator><creator>Majhi, Prashant</creator><creator>Killampalli, Aravind S</creator><creator>Gupta, Jay P</creator><creator>Clarke, James S</creator><creator>Pillarisetty, Ravi</creator><creator>Mukherjee, Niloy</creator><creator>Karpov, Elijah V</creator><creator>Shah, Uday</creator><scope>EVB</scope></search><sort><creationdate>20200225</creationdate><title>Resistive random access memory with deuterium</title><author>Jain, Pulkit ; Majhi, Prashant ; Killampalli, Aravind S ; Gupta, Jay P ; Clarke, James S ; Pillarisetty, Ravi ; Mukherjee, Niloy ; Karpov, Elijah V ; Shah, Uday</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10573809B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>Jain, Pulkit</creatorcontrib><creatorcontrib>Majhi, Prashant</creatorcontrib><creatorcontrib>Killampalli, Aravind S</creatorcontrib><creatorcontrib>Gupta, Jay P</creatorcontrib><creatorcontrib>Clarke, James S</creatorcontrib><creatorcontrib>Pillarisetty, Ravi</creatorcontrib><creatorcontrib>Mukherjee, Niloy</creatorcontrib><creatorcontrib>Karpov, Elijah V</creatorcontrib><creatorcontrib>Shah, Uday</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jain, Pulkit</au><au>Majhi, Prashant</au><au>Killampalli, Aravind S</au><au>Gupta, Jay P</au><au>Clarke, James S</au><au>Pillarisetty, Ravi</au><au>Mukherjee, Niloy</au><au>Karpov, Elijah V</au><au>Shah, Uday</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Resistive random access memory with deuterium</title><date>2020-02-25</date><risdate>2020</risdate><abstract>An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; and an oxide layer between the OEL and the bottom electrode; wherein the oxide layer includes Deuterium and oxygen vacancies. Other embodiments are described herein.</abstract><oa>free_for_read</oa></addata></record>
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title Resistive random access memory with deuterium
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-31T21%3A02%3A03IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Jain,%20Pulkit&rft.date=2020-02-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10573809B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true