Resistive random access memory with deuterium

Resistive random access memory with deuterium

An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; and an oxide layer between the OEL and the bottom electrode; wherein the oxide layer includes Deuterium and oxygen vacancies. Other embodiments ar...

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Bibliographische Detailangaben
Hauptverfasser: Jain, Pulkit, Majhi, Prashant, Killampalli, Aravind S, Gupta, Jay P, Clarke, James S, Pillarisetty, Ravi, Mukherjee, Niloy, Karpov, Elijah V, Shah, Uday
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; and an oxide layer between the OEL and the bottom electrode; wherein the oxide layer includes Deuterium and oxygen vacancies. Other embodiments are described herein.