Backside contact to a final substrate

Backside contact to a final substrate

A device structure with a backside contact includes a silicon-on-insulator substrate including a device layer, a buried insulator layer, and an electrically-conducting connection in a trench. A final substrate is connected to the buried insulator layer such that the electrically-conducting connectio...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Stamper, Anthony K, Gambino, Jeffrey P, Shank, Steven M, Jaffe, Mark D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A device structure with a backside contact includes a silicon-on-insulator substrate including a device layer, a buried insulator layer, and an electrically-conducting connection in a trench. A final substrate is connected to the buried insulator layer such that the electrically-conducting connection contacts the final substrate.