Source voltage modulated reads in non-volatile memories

Non-volatile memory strings, which are coupled to respective bit lines and source lines, may include multiple non-volatile memory cells coupled to respective word lines. Multiple sensing operations may be used to determine data programmed into a particular non-volatile memory cell. For example, a control circuit may sense multiple values from a particular non-volatile memory cell included in a non-volatile memory string using different voltage levels on a source line coupled to the non-volatile memory string. The control circuit may select one of the multiple values based on a program state of a different non-volatile memory cell adjacent to the particular non-volatile memory cell.