Optoelectronic semiconductor chip and method for producing same

Optoelectronic semiconductor chip and method for producing same

An optoelectronic semiconductor chip (10) is specified, comprising a p-type semiconductor region (4), an n-type semiconductor region (6), and an active layer arranged between the p-type semiconductor region (4) and the n-type semiconductor region (6), said active layer being designed as a multiple q...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Rudolph, Andreas
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An optoelectronic semiconductor chip (10) is specified, comprising a p-type semiconductor region (4), an n-type semiconductor region (6), and an active layer arranged between the p-type semiconductor region (4) and the n-type semiconductor region (6), said active layer being designed as a multiple quantum well structure (5), wherein the multiple quantum well structure (5) comprises quantum well layers (53) and barrier layers (51), wherein the barrier layers (51) are doped, and wherein undoped intermediate layers (52, 54) are arranged between the quantum well layers (53) and the barrier layers (51). Furthermore, a method for producing the optoelectronic semiconductor chip (10) is specified.