Etching and mechanical grinding film-layers stacked on a semiconductor substrate

In some embodiments, a method of forming an integrated circuit includes providing a semiconductor substrate having an electronic circuit formed on a front side, and having a first material layer located over a second side of the substrate and a second material layer located between the first materia...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yu, Qin Xu, Tang, She Yu, Yang, Sheng Pin, Zhang, Tian Yi, Kong, Jian Jun
Format: Patent
Sprache:eng
Schlagworte:
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