Etching and mechanical grinding film-layers stacked on a semiconductor substrate

In some embodiments, a method of forming an integrated circuit includes providing a semiconductor substrate having an electronic circuit formed on a front side, and having a first material layer located over a second side of the substrate and a second material layer located between the first materia...

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Bibliographische Detailangaben
Hauptverfasser: Yu, Qin Xu, Tang, She Yu, Yang, Sheng Pin, Zhang, Tian Yi, Kong, Jian Jun
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In some embodiments, a method of forming an integrated circuit includes providing a semiconductor substrate having an electronic circuit formed on a front side, and having a first material layer located over a second side of the substrate and a second material layer located between the first material layer and the second side. At least a portion of the first material layer is removed using a first chemical etching process, thereby exposing the second material layer. At least a portion of the second material layer is removed using a second chemical etching process. A portion of the substrate is then mechanically removed from the second side.