Process for producing polycrystalline silicon

Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface tow...

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Bibliographische Detailangaben
Hauptverfasser: Kraus, Heinz, Salzeder, Franz, Klose, Goeran
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Deposition on a sightglass in a reactor for CVD deposition of silicon is reduced by conducting a first purge gas stream substantially parallel to the reactor end surface of the sightglass, and conducting a second purge gas stream within the sightglass tube at an angle from the sightglass surface toward the interior of the reactor.