Sputtering target and/or coil, and process for producing same

A sputtering target and/or a coil disposed at a periphery of a plasma-generating region for confining plasma are provided. The target and/or coil has a surface to be eroded having a hydrogen content of 500 μL/cm2 or less. In dealing with reduction in hydrogen content of the surface of the target and...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	Makino, Nobuhito, Nagata, Kenichi
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS ANDNON-FERROUS ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY FERROUS OR NON-FERROUS ALLOYS GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUSMETALS OR ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAKING METAL MALLEABLE BY DECARBURISATION, TEMPERING OR OTHERTREATMENTS METALLURGY METALLURGY OF IRON MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A sputtering target and/or a coil disposed at a periphery of a plasma-generating region for confining plasma are provided. The target and/or coil has a surface to be eroded having a hydrogen content of 500 μL/cm2 or less. In dealing with reduction in hydrogen content of the surface of the target and/or coil, a process of producing the target and/or coil, in particular, conditions for heating the surface of the target and/or coil, which is believed to be a cause of hydrogen occlusion, are appropriately regulated. As a result, hydrogen occlusion at the surface of the target can be reduced, and the degree of vacuum during sputtering can be improved. Thus, a target and/or coil is provided that has a uniform and fine structure, makes plasma stable, and allows a film to be formed with excellent uniformity. A method of producing the target and/or the coil is also provided.