Methods of fabricating semiconductor devices

A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, th...

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Bibliographische Detailangaben
Hauptverfasser: Lee, Jun-Noh, Im, Dong-Hyun, Lee, Kongsoo, Kim, Youngseok, Ma, Jinwon
Format: Patent
Sprache:eng
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Zusammenfassung:A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.