Infrared sensor design using an epoxy film as an infrared absorption layer

A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing lay...

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Bibliographische Detailangaben
Hauptverfasser:	Meinel, Walter Baker, Goodlin, Brian E, Jackson, Ricky Alan, Lazarov, Kalin Valeriev
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.