Chemical-mechanical polishing abrasive pad conditioner and method for manufacturing same

The present invention provides a CMP abrasive pad conditioner, comprising a bottom substrate; an intermediate layer located on the bottom substrate, the intermediate layer including a hollow portion and an annular portion surrounding the hollow portion, the annular portion being provided with a plur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Chou, Chin-Chung, Hung, Yu-Chau, Wang, Hsin-Chun, Cheng, Chung-Yi, Chou, Jui-Lin
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY COMPOSITIONS BASED THEREON CRYSTAL GROWTH DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS PERFORMING OPERATIONS POLISHING PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH THEIR PREPARATION OR CHEMICAL WORKING-UP TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS
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Beschreibung
Zusammenfassung:	The present invention provides a CMP abrasive pad conditioner, comprising a bottom substrate; an intermediate layer located on the bottom substrate, the intermediate layer including a hollow portion and an annular portion surrounding the hollow portion, the annular portion being provided with a plurality of bumps; and a diamond film located on the intermediate layer, and forming a plurality of abrasive projections corresponding to the bumps of the intermediate layer; in this case, a top surface of the abrasive projections is formed with a patterned configuration and the top surface is provided with a center line average roughness (Ra) between 2 and 20.