Fin field-effect transistor (FinFet) capacitor structure for use in integrated circuits

A FinFet capacitor structure includes a first, second, third, and fourth FinFet fin, a contiguous gate layer over the fins, first and second source/drain contacts in direct physical contact with the first FinFet fin on either side of the gate layer, a first gate contact in direct physical contact wi...

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Bibliographische Detailangaben
Hauptverfasser:	Tipple, David Russell, MacDonald, Colin, Jarrar, Anis Mahmoud
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A FinFet capacitor structure includes a first, second, third, and fourth FinFet fin, a contiguous gate layer over the fins, first and second source/drain contacts in direct physical contact with the first FinFet fin on either side of the gate layer, a first gate contact in direct physical contact with a portion of the contiguous gate layer directly over the second FinFet fin, third and fourth source/drain contacts in direct physical contact with the third FinFet fin on either side of the gate layer, and a second gate contact in direct physical contact with a portion of the contiguous gate layer directly over the fourth FinFet fin. The first, second, third, and fourth source/drain contacts are all connected to a first power supply rail, and the first and second gate contacts are all connected to a second power supply rail.