Apparatus for bond wave propagation control

An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lu, Kuo Liang, Liu, Ping-Yin, Liu, Kuan-Liang, Huang, Xin-Hua
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.