Method of fabricating semiconductor device with adhesion layer
A method of fabricating a semiconductor structure includes depositing a dielectric layer over a gate stack, removing a portion of the gate stack to form a trench in the dielectric layer, depositing an insulating layer in the trench, depositing an adhesion layer over the insulating layer, and perform...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of fabricating a semiconductor structure includes depositing a dielectric layer over a gate stack, removing a portion of the gate stack to form a trench in the dielectric layer, depositing an insulating layer in the trench, depositing an adhesion layer over the insulating layer, and performing a hydrogen-containing plasma treatment on the adhesion layer. |
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