Buffer assisted charge generation layer for tandem OLEDs

Buffer assisted charge generation layer for tandem OLEDs

A tandem Organic Light Emitting Diode (OLED) apparatus and method of fabricating the same, where the tandem OLED apparatus includes a buffer assisted charge generation layer having a junction of a p-type doped semiconductor layer and an n-type doped semiconductor layer, where a hole buffer layer and...

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Bibliographische Detailangaben
Hauptverfasser: Tice, Kerry, Khayrullin, Ilyas I, Donoghue, Evan P, Ali, Tariq, Ghosh, Amalkumar P, Wang, Qi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A tandem Organic Light Emitting Diode (OLED) apparatus and method of fabricating the same, where the tandem OLED apparatus includes a buffer assisted charge generation layer having a junction of a p-type doped semiconductor layer and an n-type doped semiconductor layer, where a hole buffer layer and an electron buffer layer pair surrounding the junction of the p-type and n-type doped semiconductor layers. The OLED apparatus further includes a first OLED emissive layer and a second OLED emissive layer pair surrounding the buffer assisted charge generation layer, and a cathode and anode layer pair further surrounding the first and second OLED emissive layer pair.