Oxynitride thin film and capacitance element

A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), whe...

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Bibliographische Detailangaben
Hauptverfasser:	Shibahara, Takeshi, Nagamine, Yuki, Yamazaki, Kumiko
Format:	Patent
Sprache:	eng
Schlagworte:	ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CONDUCTORS ELECTRICITY INSULATORS LIME, MAGNESIA METALLURGY REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of AaBbOoNn (a+b+o+n=5), wherein "A" is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, "B" is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.