Integrated circuits with magnetic tunnel junctions and methods of producing the same

Integrated circuits with magnetic tunnel junctions and methods of producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a first free layer that is magnetic, a second free layer that is magnetic, and an insertion lay...

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Hauptverfasser: Lew, Wen Siang, Lim, Gerard Joseph, Tahmasebi, Taiebeh, See, Kai Hung Alex, Law, Wai Cheung, Seet, Chim Seng
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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creator Lew, Wen Siang
Lim, Gerard Joseph
Tahmasebi, Taiebeh
See, Kai Hung Alex
Law, Wai Cheung
Seet, Chim Seng
description Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a first free layer that is magnetic, a second free layer that is magnetic, and an insertion layer positioned between the first and second free layers. The insertion layer is non-magnetic, and the insertion layer includes terbium.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
title Integrated circuits with magnetic tunnel junctions and methods of producing the same
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