Integrated circuits with magnetic tunnel junctions and methods of producing the same

Integrated circuits with magnetic tunnel junctions and methods of producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a first free layer that is magnetic, a second free layer that is magnetic, and an insertion lay...

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Bibliographische Detailangaben
Hauptverfasser: Lew, Wen Siang, Lim, Gerard Joseph, Tahmasebi, Taiebeh, See, Kai Hung Alex, Law, Wai Cheung, Seet, Chim Seng
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a first free layer that is magnetic, a second free layer that is magnetic, and an insertion layer positioned between the first and second free layers. The insertion layer is non-magnetic, and the insertion layer includes terbium.