DRAM row sparing

DRAM row sparing

Example implementations relate to dynamic random-access memory (DRAM) row sparing. In example implementations, utilization of a failed row of a DRAM device may be excluded. A fuse in the DRAM device may be blown to replace the failed row with a spare row. The fuse may be blown during runtime operati...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Walton, Andrew C, Benedict, Melvin K, Handgen, Erin A, Pope, Eric L
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Example implementations relate to dynamic random-access memory (DRAM) row sparing. In example implementations, utilization of a failed row of a DRAM device may be excluded. A fuse in the DRAM device may be blown to replace the failed row with a spare row. The fuse may be blown during runtime operation of the DRAM device. Error-correcting code (ECC) may be used to correct erroneous data from the failed row while the fuse is being blown. Accesses of the failed row may be redirected to the spare row after the fuse is blown.