Semiconductor memory device

A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars...

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Bibliographische Detailangaben
Hauptverfasser: Minami, Toshifumi, Baba, Yasuyuki, Yonehama, Keisuke, Sato, Atsuhiro, Shinohara, Hiroshi, Higashitsuji, Teppei, Kamata, Hideyuki
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor memory device includes a conducting layer and an insulating layer that are disposed above a semiconductor substrate, a plurality of pillars that extend in a direction which crosses a surface of the semiconductor substrate, and a plate that is disposed between the plurality of pillars and extends in the same direction as the pillars. A surface of the plate, which faces the pillars, has convex portions and non-convex portions.