Method and system for electro-absorption modulator drivers in CMOS

Methods and systems for electro-absorption modulator drivers in CMOS may comprise an electro-absorption modulator optically coupled to a laser source and electrically coupled to a modulator driver circuit that is in a complementary metal oxide semiconductor (CMOS) chip. The electro-absorption modulator includes a summer for receiving a negative bias voltage and a programmable offset voltage, a voltage regulator for receiving the output of the summer and generating a negative DC voltage of lower magnitude than the negative bias voltage, level shifting circuitry for shifting a received data signal to a DC voltage level between the negative DC voltage from the voltage regulator and the negative bias voltage, and an electrical coupling structure for DC-coupling the level shifted data signal to the modulator. The bias voltage may be received from an off-chip low drop out (LDO) voltage regulator. The level shifting circuitry may include cascode CMOS transistors and a current mirror.