Chip resistor and method for producing the same

Provided is a thin-film chip resistor including an insulating substrate; a thin-film resistive element formed on the substrate; a pair of electrodes connected to the thin-film resistive element; and a protective film covering at least the thin-film resistive element between the pair of electrodes, i...

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Bibliographische Detailangaben
1. Verfasser:	Hiroshima, Yasushi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS RESISTORS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	Provided is a thin-film chip resistor including an insulating substrate; a thin-film resistive element formed on the substrate; a pair of electrodes connected to the thin-film resistive element; and a protective film covering at least the thin-film resistive element between the pair of electrodes, in which the protective film includes a first protective film and a second protective film, the first protective film containing silicon nitride in contact with the thin-film resistive element, and the second protective film containing silicon oxide in contact with the first protective film.