Magnetic memory device
According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second in...
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| creator | Hashimoto, Susumu Sanuki, Tomoya Shimada, Takuya Aochi, Hideaki Miyano, Shinji Ootera, Yasuaki Ito, Yuichi Kondo, Tsuyoshi Quinsat, Michael Arnaud Ueda, Yoshihiro Kado, Masaki Umetsu, Nobuyuki Nakamura, Shiho Yoshimizu, Yasuhito |
| description | According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation. |
| format | Patent |
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The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191015&DB=EPODOC&CC=US&NR=10446249B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191015&DB=EPODOC&CC=US&NR=10446249B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hashimoto, Susumu</creatorcontrib><creatorcontrib>Sanuki, Tomoya</creatorcontrib><creatorcontrib>Shimada, Takuya</creatorcontrib><creatorcontrib>Aochi, Hideaki</creatorcontrib><creatorcontrib>Miyano, Shinji</creatorcontrib><creatorcontrib>Ootera, Yasuaki</creatorcontrib><creatorcontrib>Ito, Yuichi</creatorcontrib><creatorcontrib>Kondo, Tsuyoshi</creatorcontrib><creatorcontrib>Quinsat, Michael Arnaud</creatorcontrib><creatorcontrib>Ueda, Yoshihiro</creatorcontrib><creatorcontrib>Kado, Masaki</creatorcontrib><creatorcontrib>Umetsu, Nobuyuki</creatorcontrib><creatorcontrib>Nakamura, Shiho</creatorcontrib><creatorcontrib>Yoshimizu, Yasuhito</creatorcontrib><title>Magnetic memory device</title><description>According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. 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The controller is configured to supply a first reading current in the first current path in a first reading operation.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBDzTUzPSy3JTFbITc3NL6pUSEkty0xO5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpQF3xocGGBiYmZkYmlk5GxsSoAQCd-CGe</recordid><startdate>20191015</startdate><enddate>20191015</enddate><creator>Hashimoto, Susumu</creator><creator>Sanuki, Tomoya</creator><creator>Shimada, Takuya</creator><creator>Aochi, Hideaki</creator><creator>Miyano, Shinji</creator><creator>Ootera, Yasuaki</creator><creator>Ito, Yuichi</creator><creator>Kondo, Tsuyoshi</creator><creator>Quinsat, Michael Arnaud</creator><creator>Ueda, Yoshihiro</creator><creator>Kado, Masaki</creator><creator>Umetsu, Nobuyuki</creator><creator>Nakamura, Shiho</creator><creator>Yoshimizu, Yasuhito</creator><scope>EVB</scope></search><sort><creationdate>20191015</creationdate><title>Magnetic memory device</title><author>Hashimoto, Susumu ; Sanuki, Tomoya ; Shimada, Takuya ; Aochi, Hideaki ; Miyano, Shinji ; Ootera, Yasuaki ; Ito, Yuichi ; Kondo, Tsuyoshi ; Quinsat, Michael Arnaud ; Ueda, Yoshihiro ; Kado, Masaki ; Umetsu, Nobuyuki ; Nakamura, Shiho ; Yoshimizu, Yasuhito</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10446249B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Hashimoto, Susumu</creatorcontrib><creatorcontrib>Sanuki, Tomoya</creatorcontrib><creatorcontrib>Shimada, Takuya</creatorcontrib><creatorcontrib>Aochi, Hideaki</creatorcontrib><creatorcontrib>Miyano, Shinji</creatorcontrib><creatorcontrib>Ootera, Yasuaki</creatorcontrib><creatorcontrib>Ito, Yuichi</creatorcontrib><creatorcontrib>Kondo, Tsuyoshi</creatorcontrib><creatorcontrib>Quinsat, Michael Arnaud</creatorcontrib><creatorcontrib>Ueda, Yoshihiro</creatorcontrib><creatorcontrib>Kado, Masaki</creatorcontrib><creatorcontrib>Umetsu, Nobuyuki</creatorcontrib><creatorcontrib>Nakamura, Shiho</creatorcontrib><creatorcontrib>Yoshimizu, Yasuhito</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hashimoto, Susumu</au><au>Sanuki, Tomoya</au><au>Shimada, Takuya</au><au>Aochi, Hideaki</au><au>Miyano, Shinji</au><au>Ootera, Yasuaki</au><au>Ito, Yuichi</au><au>Kondo, Tsuyoshi</au><au>Quinsat, Michael Arnaud</au><au>Ueda, Yoshihiro</au><au>Kado, Masaki</au><au>Umetsu, Nobuyuki</au><au>Nakamura, Shiho</au><au>Yoshimizu, Yasuhito</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Magnetic memory device</title><date>2019-10-15</date><risdate>2019</risdate><abstract>According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
| title | Magnetic memory device |
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