Magnetic memory device

Magnetic memory device

According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second in...

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Bibliographische Detailangaben
Hauptverfasser: Hashimoto, Susumu, Sanuki, Tomoya, Shimada, Takuya, Aochi, Hideaki, Miyano, Shinji, Ootera, Yasuaki, Ito, Yuichi, Kondo, Tsuyoshi, Quinsat, Michael Arnaud, Ueda, Yoshihiro, Kado, Masaki, Umetsu, Nobuyuki, Nakamura, Shiho, Yoshimizu, Yasuhito
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:According to one embodiment, a magnetic memory device includes a first interconnect, a second interconnect, a first memory portion, and a controller. The first memory portion is provided between the first and second interconnects. The controller is electrically connected with the first and second interconnects. The first memory portion includes a first magnetic member, a first magnetic element, and a first non-linear element. The first magnetic element is provided between the first magnetic member and the second interconnect in a first current path between the first and second interconnects. The first non-linear element is provided between the first magnetic element and the second interconnect in the first current path. The controller is configured to supply a first shift current in the first current path in a first shift operation. The controller is configured to supply a first reading current in the first current path in a first reading operation.