Method for producing deposition mask

A step of forming openings in a mask substrate includes step A of forming openings of "a" number of continual columns included in a first region (R1) including at least the (n/2)th column or the ((n+1)/2)th column; step B of forming openings of "b" number of continual columns inc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Sakio, Susumu, Kishimoto, Katsuhiko
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A step of forming openings in a mask substrate includes step A of forming openings of "a" number of continual columns included in a first region (R1) including at least the (n/2)th column or the ((n+1)/2)th column; step B of forming openings of "b" number of continual columns included in a second region (R2) adjacent to the first region (R1) in a −x direction with a first gap region (RS1) being sandwiched between the first and second regions, the first gap region including "sa" number of continual columns; and step C of forming openings of "c" number of continual columns included in a third region (R3) adjacent to the first region (R1) in an x direction with a second gap region (RS2) being sandwiched between the first and third regions, the second gap region including "sb" number of continual columns. The steps B and C are performed after the step A.