Semiconductor device including an air gap between wirings and manufacturing method thereof
A semiconductor device according to present embodiment has first wirings provided in a first area and made of a first metal. A first gap is provided between the first wirings adjacent to each other. Second wirings or contact plugs are provided in a second area in which the first wirings are not prov...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor device according to present embodiment has first wirings provided in a first area and made of a first metal. A first gap is provided between the first wirings adjacent to each other. Second wirings or contact plugs are provided in a second area in which the first wirings are not provided. The second wirings or contact plugs are made of a second metal. A first insulation film is provided between the second wirings or contact plugs adjacent to each other. The first insulation film has second gaps. A second insulation film is provided on the first wirings, the first gap, and the second gaps. |
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