Poly-phased inductively coupled plasma source

Embodiments of systems and methods for a poly-phased inductively coupled plasma source are described. In an embodiment, a system may include a metal source configured to supply a metal for ionized physical vapor deposition on a substrate in a process chamber. The system may also include a high-density plasma source configured to generate a dense plasma, the high-density plasma source comprising a plurality of inductively coupled antennas. Additionally, the system may include a substrate bias source configured to provide a potential necessary to thermalize and ionize the plasma. In such embodiments, each antenna is configured to receive power at a phase orientation determined according to a phase arrangement.