Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

In a vertical MOSFET having a trench gate structure, a lifetime killer region is provided in a p-type epitaxial layer formed by epitaxial growth. The lifetime killer region includes an electron lifetime killer that causes electrons entering the lifetime killer region to recombine and become extinct....

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Hauptverfasser: Tawara, Takeshi, Miyajima, Masaaki, Miyazato, Masaki, Ryo, Mina
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Tawara, Takeshi
Miyajima, Masaaki
Miyazato, Masaki
Ryo, Mina
description In a vertical MOSFET having a trench gate structure, a lifetime killer region is provided in a p-type epitaxial layer formed by epitaxial growth. The lifetime killer region includes an electron lifetime killer that causes electrons entering the lifetime killer region to recombine and become extinct. As a result, the lifetime killer region decreases the electrons generated at the pn interface of the p-type epitaxial layer and an n-type drift layer and enables a configuration in which electrons are not delivered to the p-type epitaxial layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
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