Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

In a vertical MOSFET having a trench gate structure, a lifetime killer region is provided in a p-type epitaxial layer formed by epitaxial growth. The lifetime killer region includes an electron lifetime killer that causes electrons entering the lifetime killer region to recombine and become extinct. As a result, the lifetime killer region decreases the electrons generated at the pn interface of the p-type epitaxial layer and an n-type drift layer and enables a configuration in which electrons are not delivered to the p-type epitaxial layer.