Process-induced distortion prediction and feedforward and feedback correction of overlay errors

Systems and methods for prediction and measurement of overlay errors are disclosed. Process-induced overlay errors may be predicted or measured utilizing film force based computational mechanics models. More specifically, information with respect to the distribution of film force is provided to a fi...

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Bibliographische Detailangaben
Hauptverfasser:	Sinha, Jaydeep, Vukkadala, Pradeep, Veeraraghavan, Sathish, Chen, Haiguang
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TESTING
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Beschreibung
Zusammenfassung:	Systems and methods for prediction and measurement of overlay errors are disclosed. Process-induced overlay errors may be predicted or measured utilizing film force based computational mechanics models. More specifically, information with respect to the distribution of film force is provided to a finite element (FE) model to provide more accurate point-by-point predictions in cases where complex stress patterns are present. Enhanced prediction and measurement of wafer geometry induced overlay errors are also disclosed.