Etching compositions and methods for using same

A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from...

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Bibliographische Detailangaben
Hauptverfasser: Liu, Wen Dar, Chen, Tianniu, Tseng, Edward Chia Kai, Mebrahtu, Thomas, Lee, Yi-Chia, Parris, Gene Everad, Wu, Aiping
Format: Patent
Sprache:eng
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Zusammenfassung:A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.