Optoelectronic device and method for manufacturing the same

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a t...

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Bibliographische Detailangaben
Hauptverfasser:	Chen, Chao-Hsing, Wang, Jia-Kuen
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF HEATING INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21Sand F21V, RELATING TO THEFORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THELIGHT EMITTED LIGHT SOURCES NOT OTHERWISE PROVIDED FOR LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATINGELEMENTS LIGHTING MECHANICAL ENGINEERING NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE SEMICONDUCTOR DEVICES STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR WEAPONS
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Beschreibung
Zusammenfassung:	An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of the first semiconductor layer; an insulative layer formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer; wherein a space between a sidewall of the first metal layer and a sidewall of the semiconductor stack is less than 3 μm.