Integrated circuit device
An integrated circuit device includes a base burying insulating film covering a lower side wall of a fin-type active region on a substrate, an isolation pattern having a top surface higher than a top surface of the base burying insulating film, and a gate line covering a channel section of the fin-t...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | An integrated circuit device includes a base burying insulating film covering a lower side wall of a fin-type active region on a substrate, an isolation pattern having a top surface higher than a top surface of the base burying insulating film, and a gate line covering a channel section of the fin-type active region. The gate line has an upper gate covering an upper portion of the channel section and a lower gate protruding from the upper gate toward the substrate and filling a space between a lower side wall of the channel section and an upper side wall of the isolation pattern. |
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