Selective gate spacers for semiconductor devices

Selective gate spacers for semiconductor devices

Techniques related to forming selective gate spacers for semiconductor devices and transistor structures and devices formed using such techniques are discussed. Such techniques include forming a blocking material on a semiconductor fin, disposing a gate having a different surface chemistry than the...

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Hauptverfasser: Gstrein, Florian, Hourani, Rami, Romero, Patricio E, Liao, Szuya S, Clendenning, Scott B, Kloster, Grant M, Mitan, Martin M
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Gstrein, Florian
Hourani, Rami
Romero, Patricio E
Liao, Szuya S
Clendenning, Scott B
Kloster, Grant M
Mitan, Martin M
description Techniques related to forming selective gate spacers for semiconductor devices and transistor structures and devices formed using such techniques are discussed. Such techniques include forming a blocking material on a semiconductor fin, disposing a gate having a different surface chemistry than the blocking material on a portion of the blocking material, forming a selective conformal layer on the gate but not on a portion of the blocking material, and removing exposed portions of the blocking material.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Selective gate spacers for semiconductor devices
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