Amorphous seed layer for improved stability in perpendicular STTM stack

A material layer stack for a magnetic tunneling junction, the material layer stack including a fixed magnetic layer; a dielectric layer; a free magnetic layer; and an amorphous electrically-conductive seed layer, wherein the fixed magnetic layer is disposed between the dielectric layer and the seed...

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Bibliographische Detailangaben
Hauptverfasser:	Doczy, Mark L, Doyle, Brian S, Kuo, Charles C, Chau, Robert S, Oguz, Kaan, Suri, Satyarth
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SEMICONDUCTOR DEVICES STATIC STORES TRANSFORMERS
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Beschreibung
Zusammenfassung:	A material layer stack for a magnetic tunneling junction, the material layer stack including a fixed magnetic layer; a dielectric layer; a free magnetic layer; and an amorphous electrically-conductive seed layer, wherein the fixed magnetic layer is disposed between the dielectric layer and the seed layer. A non-volatile memory device including a material stack including an amorphous electrically-conductive seed layer; and a fixed magnetic layer juxtaposed and in contact with the seed layer. A method including forming an amorphous seed layer on a first electrode of a memory device; forming a material layer stack on the amorphous seed layer, the material stack including a dielectric layer disposed between a fixed magnetic layer and a free magnetic layer, wherein the fixed magnetic layer.