Semiconductor device and manufacturing method of the same

A semiconductor device includes: a drift layer; a base layer on the drift layer; a collector layer and a cathode layer opposite to the base layer; multiple trenches penetrating the base layer; a gate electrode in each trench; an emitter region in a surface portion of the base layer and contacting each trench; a first electrode connected to the base layer and the emitter region; and a second electrode connected to the collector layer and the cathode layer. The gate electrodes in a diode region of a semiconductor substrate are controlled independently from the gate electrodes in the IGBT region. A voltage not forming an inversion layer in the base layer is applied to the gate electrodes in the diode region.