Method for growing single crystal
According to an embodiment of the present invention, there is provided a method for growing a single crystal ingot having a target resistivity in a silicon melt by the Czochralski method, including steps of: deriving a resistivity value according to a dopant concentration included in a raw material...
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| creator | Hwang, Jung-Ha Kang, In-Gu Bang, In-Sik |
| description | According to an embodiment of the present invention, there is provided a method for growing a single crystal ingot having a target resistivity in a silicon melt by the Czochralski method, including steps of: deriving a resistivity value according to a dopant concentration included in a raw material and tabulating the resistivity value with reliable data; setting a reference value of a dopant concentration with respect to a target resistivity value; deriving a measurement value with respect to the dopant concentration included in the raw material itself; calculating a difference value between the reference value and the measurement value; and performing a counter doping on the silicon melt as much as the difference value. Accordingly, a single crystal ingot having a resistivity of 8 kΩ or more can be grown without improving impurities included in the raw material itself. |
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Accordingly, a single crystal ingot having a resistivity of 8 kΩ or more can be grown without improving impurities included in the raw material itself.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190813&DB=EPODOC&CC=US&NR=10378122B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190813&DB=EPODOC&CC=US&NR=10378122B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Hwang, Jung-Ha</creatorcontrib><creatorcontrib>Kang, In-Gu</creatorcontrib><creatorcontrib>Bang, In-Sik</creatorcontrib><title>Method for growing single crystal</title><description>According to an embodiment of the present invention, there is provided a method for growing a single crystal ingot having a target resistivity in a silicon melt by the Czochralski method, including steps of: deriving a resistivity value according to a dopant concentration included in a raw material and tabulating the resistivity value with reliable data; setting a reference value of a dopant concentration with respect to a target resistivity value; deriving a measurement value with respect to the dopant concentration included in the raw material itself; calculating a difference value between the reference value and the measurement value; and performing a counter doping on the silicon melt as much as the difference value. 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Accordingly, a single crystal ingot having a resistivity of 8 kΩ or more can be grown without improving impurities included in the raw material itself.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Method for growing single crystal |
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