Method for growing single crystal

Method for growing single crystal

According to an embodiment of the present invention, there is provided a method for growing a single crystal ingot having a target resistivity in a silicon melt by the Czochralski method, including steps of: deriving a resistivity value according to a dopant concentration included in a raw material...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Hwang, Jung-Ha, Kang, In-Gu, Bang, In-Sik
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:According to an embodiment of the present invention, there is provided a method for growing a single crystal ingot having a target resistivity in a silicon melt by the Czochralski method, including steps of: deriving a resistivity value according to a dopant concentration included in a raw material and tabulating the resistivity value with reliable data; setting a reference value of a dopant concentration with respect to a target resistivity value; deriving a measurement value with respect to the dopant concentration included in the raw material itself; calculating a difference value between the reference value and the measurement value; and performing a counter doping on the silicon melt as much as the difference value. Accordingly, a single crystal ingot having a resistivity of 8 kΩ or more can be grown without improving impurities included in the raw material itself.