Semiconductor device and manufacturing method thereof

In a method for manufacturing a semiconductor device, a first dielectric layer is formed over an underlying structure disposed on a substrate. A planarization resistance layer is formed over the first dielectric layer. A second dielectric layer is formed over the first dielectric layer and the plana...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Lee, Liang-Yao, Tsai, Tsung-Chieh, Wu, Juing-Yi
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!