Semiconductor device and manufacturing method thereof
In a method for manufacturing a semiconductor device, a first dielectric layer is formed over an underlying structure disposed on a substrate. A planarization resistance layer is formed over the first dielectric layer. A second dielectric layer is formed over the first dielectric layer and the plana...
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| Zusammenfassung: | In a method for manufacturing a semiconductor device, a first dielectric layer is formed over an underlying structure disposed on a substrate. A planarization resistance layer is formed over the first dielectric layer. A second dielectric layer is formed over the first dielectric layer and the planarization resistance layer. A planarization operation is performed on the second dielectric layer, the planarization resistance layer and the first dielectric layer. The planarization resistance film is made of a material different from the first dielectric layer. |
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