Vertical transport FET with two or more gate lengths

A method for forming a device with multiple gate lengths includes forming a gate stack on vertical fins. A cutting mask formed on the gate stack is etched to include two or more different heights. Gate structures with two or more gate lengths are etched by employing the two or more different heights...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Karve, Gauri, Clevenger, Leigh Anne H, Lie, Fee Li, Ebrish, Mona, Saulnier, Nicole A, Seshadri, Indira, De Silva, Ekmini A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method for forming a device with multiple gate lengths includes forming a gate stack on vertical fins. A cutting mask formed on the gate stack is etched to include two or more different heights. Gate structures with two or more gate lengths are etched by employing the two or more different heights in the cutting mask as an etch mask. The cutting mask is removed. A top source/drain regions is formed on top of the vertical fins.