Multi-chip package of power semiconductor

A multi-chip package of power semiconductor includes a lead frame, a first segment group, a second segment group, a first power semiconductor chip and a second power semiconductor chip. The lead frame includes a first segment group having a first gate segment, a first source segment, and a first dra...

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Bibliographische Detailangaben
Hauptverfasser: Go, Si Hyeon, Oh, Dong Seong, Park, Myung Ho, Kim, Beom Su, Choi, Jae Sik
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A multi-chip package of power semiconductor includes a lead frame, a first segment group, a second segment group, a first power semiconductor chip and a second power semiconductor chip. The lead frame includes a first segment group having a first gate segment, a first source segment, and a first drain segment that are separated from each other. The second segment group has a second gate segment, a second source segment, and a second drain segment that are separated from each other. The first power semiconductor chip is formed on the first segment group. The second power semiconductor chip is formed on the second segment group. The first source segment is physically connected to the second drain segment.