Rare earth nitride structure or device and fabrication method

Structure or device comprising a hexagonal crystal layer or hexagonal crystal substrate, and a (001)-oriented rare earth nitride epitaxial layer on the hexagonal crystal layer or hexagonal crystal substrate.

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Bibliographische Detailangaben
Hauptverfasser:	Trodahl, Harry Joseph, Natali, Franck, Peng Cheong Chan, Jay Ross, Ruck, Benjamin John, Vézian, Stéphane Ange
Format:	Patent
Sprache:	eng
Schlagworte:	APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBEMICROSCOPY [SPM] BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING METALLURGY PHYSICS SCANNING-PROBE TECHNIQUES OR APPARATUS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	Structure or device comprising a hexagonal crystal layer or hexagonal crystal substrate, and a (001)-oriented rare earth nitride epitaxial layer on the hexagonal crystal layer or hexagonal crystal substrate.