Semiconductor wafer surface protection film and method for manufacturing semiconductor device

This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a mi...

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Bibliographische Detailangaben
Hauptverfasser:	Igarashi, Kouji, Kamada, Jun, Sukegawa, Makoto, Kawasaki, Noboru, Kinoshita, Jin, Morimoto, Akimitsu, Usugi, Shinichi
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL PAINTS PERFORMING OPERATIONS POLISHES SEMICONDUCTOR DEVICES TRANSPORTING USE OF MATERIALS AS ADHESIVES
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Beschreibung
Zusammenfassung:	This semiconductor wafer surface protection film has a substrate layer A, an adhesive absorption layer B, and adhesive surface layer C, in the stated order. The adhesive absorption layer B comprises an adhesive composition containing a thermoset resin b1, said adhesive absorption layer B having a minimum value G′bmin of the storage elastic modulus G′b in the range of 25° C. to less than 250° C. of 0.001 MPa to less than 0.1 MPa, a storage elastic modulus G′b250 at 250° C. of 0.005 MPa or above, and a temperature at which G′bmin is exhibited of 50-150° C. The adhesive surface layer C has a minimum value G′cmin of the storage elastic modulus G′c in the range of 25° C. to less than 250° C. of 0.03 MPa.