Vertical quantum transistor

A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicin...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Gauthier, Alexis, Ribes, Guillaume C
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A vertical transistor includes two portions of a gate conductor that extend within a layer of insulator. An opening extending through the later of insulator includes source, channel and drain regions form by epitaxy operations. A thickness of the portions of the gate conductor decreases in the vicinity of the channel region.